Voltage translator device

ABSTRACT

In at least one general aspect, an apparatus can include a first voltage domain circuit configured to operate based on a first upper voltage and a first lower voltage, and a second voltage domain circuit configured to operate based on a second upper voltage and a second lower voltage. The apparatus can include a capacitive coupling circuit electrically connected between the first voltage domain circuit and the second voltage domain circuit, and a driver circuit including a switch device and electrically coupled to the second voltage domain circuit. The apparatus can also include an intermediate voltage domain circuit configured to trigger switching of the switch device included in the driver circuit where the intermediate voltage domain is configured to operate based on an intermediate voltage and the second upper voltage or the second lower voltage.

TECHNICAL FIELD

This description relates to a voltage translator device.

BACKGROUND

Many applications have different power domains and need a translator totranslate a signal from one power domain to another power domain. Sometranslators may not be capable of appropriately translating a signalfrom one power domain to another power domain when power supply voltagesare relatively low. Thus, a need exists for systems, methods, andapparatus to address the shortfalls of present technology and to provideother new and innovative features.

SUMMARY

In at least one general aspect, an apparatus can include a first voltagedomain circuit configured to operate based on a first upper voltage anda first lower voltage, and a second voltage domain circuit configured tooperate based on a second upper voltage and a second lower voltage. Theapparatus can include a capacitive coupling circuit electricallyconnected between the first voltage domain circuit and the secondvoltage domain circuit, and a driver circuit including a switch deviceand electrically coupled to the second voltage domain circuit. Theapparatus can also include an intermediate voltage domain circuitconfigured to trigger switching of the switch device included in thedriver circuit where the intermediate voltage domain is configured tooperate based on an intermediate voltage and the second upper voltage orthe second lower voltage.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other features will beapparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram that illustrates a voltage translator device.

FIG. 2 is a diagram that illustrates an example implementation of thevoltage translator device shown in FIG. 1.

FIG. 3 is a diagram that illustrates example voltage domains associatedwith the voltage translator devices shown in FIGS. 1 and 2.

FIG. 4 is a diagram that illustrates an example implementation of thevoltage translator device shown in FIG. 1.

FIG. 5 is a diagram that illustrates example voltage domains associatedwith the voltage translator devices shown in FIGS. 1 and 4.

FIG. 6 is a flowchart that illustrates a method of operating the voltagetranslator devices described herein.

DETAILED DESCRIPTION

A voltage translator device (e.g., a fast floating voltage translator),as described herein, can be configured to translate an input voltagesignal from a first power domain (e.g., a high voltage domain) to asecond power domain (e.g., a low voltage domain). An output voltagesignal can be output based on voltages included in the second powerdomain. The voltage translator device includes an intermediate voltagedomain circuit (also can be referred to as an intermediate stage) andcapacitive coupling circuit (e.g., an alternating current (AC) couplingcircuit) configured to facilitate translation of the input voltagesignal to the output voltage signal. The capacitive coupling circuit caninclude one or more capacitors (e.g., metal-oxide-metal (mom)capacitors) for isolation of the first power domain from the secondpower domain. In some implementations, the voltage translator device canoperate at relatively low voltage supplies (e.g., low power supplyvoltages within the voltage domains). In some implementations, thevoltage translator device can have a relatively small propagation delay.In some implementations, the voltage translator device can be configuredto use relatively low voltage devices (e.g., not high voltage devices)to reduce semiconductor die area. The voltage domains can be digitalvoltage domains with an upper voltage and a lower voltage.

FIG. 1 is a diagram that illustrates a voltage translator device 100.The voltage translator device 100 is configured to translate an inputvoltage signal VIN (also can be referred to as an input signal) within afirst voltage domain to an output voltage signal VOUT (also can bereferred to as an output signal) within a second voltage domain. Each ofthe first voltage domain and the second voltage domain can include anupper voltage and a lower voltage that define a voltage range (e.g., a 3V range, a 5 V range, a 10 V range). Accordingly, the input voltagesignal can be configured to modulate (e.g., swing) within the voltagerange (e.g., between a first upper voltage and a first lower voltage)defining the first voltage domain, and the output voltage signal can beconfigured to modulate (e.g., swing) within the voltage range (e.g.,between a second upper voltage and a second lower voltage) defining thesecond voltage domain.

The first voltage domain can be associated with a first voltage domaincircuit 110, and the second voltage domain can be associated with asecond voltage domain circuit 150 shown in FIG. 1. Specifically, thefirst voltage domain circuit 110 can be configured to operate based onthe first voltage domain, and the second voltage domain circuit 150 canbe configured to operate based on the second voltage domain. The inputsignal VIN can be from a circuit (e.g., device) (not shown) coupled to(e.g., electrically coupled to) the voltage translator device 100 andoperating within the first voltage domain. The output signal VOUT can beprovided to (e.g., output to) a circuit and/or device (not shown)coupled to (e.g., electrically coupled to) the voltage translator device100 and operating within the second voltage domain.

As shown in FIG. 1, the voltage translator device 100 includes acapacitive coupling circuit 120, an intermediate voltage domain circuit130, and a driver circuit 140. The intermediate voltage domain circuit130 can be configured to trigger a driver circuit 140 to drive (e.g.,switch, set and reset) the second voltage domain circuit 150. Theintermediate voltage domain circuit 130 can have an intermediate voltagedomain that is different than the first voltage domain (associated withthe first voltage domain circuit 110) and the second voltage domain(associated with the second voltage domain circuit 150).

The capacitive coupling circuit 120 is electrically connected betweenthe first voltage domain and the second voltage domain. The capacitivecoupling circuit 120 can be configured to isolate the first voltagedomain from the second voltage domain. An input circuit IC can beincluding on a first side of the capacitive coupling circuit 120, and anoutput circuit OC can be included on the second side of the capacitivecoupling circuit 120. The capacitive coupling circuit can be analternating current (AC) coupling circuit.

In some implementations, the driver circuit 140 can include one or moreswitches. In some implementations, a switch included within the drivercircuit 140 can be, or can include, a metal-oxide-semiconductorfield-effect transistor (MOSFET) device (e.g., N-channel MOSFET (NMOS)device, P-channel MOSFET (PMOS) device), a bipolar junction transistor(BJT) device, and/or so forth.

In some implementations, the first voltage domain circuit 110 includes alatch circuit. In some implementations, the second voltage domaincircuit 150 includes a latch circuit. In some implementations, thesecond voltage domain circuit 150 can include a latch circuit configuredto be set and reset in response to the driver circuit 140. In someimplementations, the second voltage domain circuit 150 can include alatch circuit configured to be set and reset in response to a switchdevice included in the driver circuit 140.

In some implementations, the output circuit OC can include a first latchcircuit (within the second voltage domain circuit 150) configured tooperate based on a second voltage domain different from the firstvoltage domain (of the input circuit IC). The output circuit OC caninclude a switch device (not shown) included within the driver circuit140. The output circuit OC can include a second latch circuit (notshown) configured to trigger switching of the switch device andconfigured to operate based on an intermediate voltage domain of theintermediate voltage domain circuit 130.

In some implementations, a voltage range of the first voltage domain canoverlap with a voltage range of the second voltage domain. For example,an upper voltage of the first voltage domain can be within the voltagerange of the second voltage domain and/or a lower voltage of the firstvoltage domain can be within the voltage range of the second voltagedomain. In some implementation, an upper voltage of the first voltagedomain can be higher than an upper voltage of the second voltage domainand/or a lower voltage of the first voltage domain can be lower than alower voltage of the second voltage domain.

In some implementations, a voltage range of the first voltage domain maynot overlap with a voltage range of the second voltage domain. In otherwords, the voltage range of the first voltage domain can be outside ofthe voltage range of the second voltage domain.

In some implementations, a voltage range of the intermediate voltagedomain can overlap with a voltage range of the first domain and/or avoltage range of the second voltage domain. For example, an uppervoltage of the intermediate voltage domain can be within the voltagerange of the first voltage domain and/or the voltage range of the secondvoltage domain. As another example, a lower voltage of the intermediatevoltage domain can be within the voltage range of the first voltagedomain and/or the voltage range of the second voltage domain.

In some implementations, at least a portion of a voltage range of theintermediate voltage domain can be outside of a voltage range of thefirst domain and/or a voltage range of the second voltage domain. Forexample, an upper voltage of the intermediate voltage domain can beoutside of (e.g., above) the voltage range of the first voltage domainand/or the voltage range of the second voltage domain. As anotherexample, a lower voltage of the intermediate voltage domain can beoutside of (e.g., below) the voltage range of the first voltage domainand/or the voltage range of the second voltage domain.

In some implementations, the intermediate voltage domain circuit 130 canbe configured to trigger switching of a switch device included in thedriver circuit 140. The intermediate voltage domain circuit 130 can beconfigured to operate based on an intermediate voltage and the secondupper voltage or the second lower voltage. For example, the intermediatevoltage domain circuit 130 can be configured to operate based on anupper voltage of the intermediate voltage domain and a lower voltage ofthe intermediate voltage domain can be equal to a lower voltage of thesecond voltage domain of the second voltage domain circuit 150. Asanother example, the intermediate voltage domain circuit 130 can beconfigured to operate based on a lower voltage of the intermediatevoltage domain and an upper voltage of the intermediate voltage domaincan be equal to an upper voltage of the second voltage domain of thesecond voltage domain circuit 150.

In the implementations described herein, the voltage translator device100 can operate based on voltages ranges that are relatively small(e.g., 1.8 V or lower). The voltage translator device 100 can havelittle to no static power dissipation. The propagation delay of voltagetranslator device 100 can be favorable given that the voltage translatordevice 100 includes capacitive coupling (e.g., capacitive couplingcircuit 120). The voltage translator device 100 can include low-voltagedevices (e.g., 30 V devices) (rather than high-voltage devices) with arelatively small size. The upper voltage of the first voltage domaincircuit 110 can be greater than or less than upper voltage of the secondvoltage domain circuit 120.

FIG. 2 is a diagram that illustrates an example implementation of thevoltage translator device 100 shown in FIG. 1. FIG. 2 illustratesexamples of device elements that can be included in, or may function as,the first domain voltage circuit 110, the capacitive coupling circuit120, the intermediate voltage domain circuit 130, the driver circuit140, and/or the second voltage domain circuit 150.

As shown in FIG. 2, the first voltage domain circuit 110 operates basedon a first voltage domain including first upper domain voltage VDD1 andfirst lower domain voltage VSS1. The second voltage domain circuit 150operates based on a second voltage domain including second upper domainvoltage VDD2 and second lower domain voltage VSS2. The intermediatevoltage domain circuit 130 operates based on an intermediate voltagedomain including an intermediate upper domain voltage VREG and thesecond lower domain voltage VSS2. Accordingly, the intermediate voltagedomain circuit 130 and the second voltage domain circuit 150 have thesame lower domain voltage (second lower domain voltage VSS2).

As shown in FIG. 2, the first voltage domain circuit 110 includesinverters I1 and I2. The input voltage VIN is inverted by the inverterI1 to VIN-1 and the voltage VIN-1 is inverted by the inverter I2 toVIN-2. The voltages VIN-1 and VIN-2 are within a voltage range definedby the first voltage domain of the first voltage domain circuit 110. Thevoltage VIN-1 is opposite the voltage VIN-2. For example, when thevoltage of VIN-1 is high (e.g., at the upper voltage of the firstvoltage domain) the voltage of VIN-2 is low (e.g., at the lower voltageof the first voltage domain).

The voltage VIN-1 is capacitively coupled via capacitor C1 to thevoltage VINT-1 and the voltage VIN-2 is capacitively coupled viacapacitor C2 to voltage VINT-2. The voltages VINT-1 and VINT-2 are onopposite sides of the intermediate voltage domain circuit 130, which inthis implementation, includes a latch circuit including inverters 13 and14. The voltages VINT-1 and VINT-2 are within a voltage range defined bythe intermediate voltage domain of the intermediate voltage domaincircuit 110.

The voltage VINT-1 is opposite the voltage VINT-2. For example, when thevoltage of VINT-1 is high (e.g., at the upper voltage of theintermediate voltage domain) the voltage of VINT-2 is low (e.g., at thelower voltage of the intermediate voltage domain).

The voltages VINT-1 and VINT-2 drive the elements of the driver circuit140. Specifically, the voltage VINT-1 drives a gate of NMOS device N1via a connection between the intermediate voltage domain circuit 130(e.g., an input side of the intermediate voltage domain circuit 130) andthe gate of NMOS device N1. The voltage VINT-2 drives a gate of NMOSdevice N2 via a connection between the intermediate voltage domaincircuit 130 (e.g., an input side of the intermediate voltage domaincircuit 130) and the gate of NMOS device N2.

As shown in FIG. 2, a source of the NMOS device N1 of the driver circuit140 is coupled to a source of the NMOS device N2 of the driver circuit140. The drain of the NMOS device N1 is connected (e.g., via anelectrical connection) to an input side of the second voltage domaincircuit 150. The drain of the NMOS device N2 is connected (e.g., via anelectrical connection) to an output side of the second voltage domaincircuit 150. Accordingly, the driver circuit 140 is connected to theinput side and the output side of the second voltage domain circuit 150.

The voltage VOUT-1 can function as the output signal of the voltagetranslator device 100. The voltage VOUT-1 can be at the same state asthe input voltage VIN, but the two voltages can be in different voltagedomains. For example, when the voltage VIN is at a high voltage (e.g.,high state) of the first voltage domain, the voltage VOUT-1 is at thehigh voltage (e.g., high state) of the second voltage domain.

The voltage VOUT-2 can be opposite the voltage VOUT-1. For example, whenthe voltage of VOUT-1 is high (e.g., at the upper voltage of the secondvoltage domain) the voltage of VOUT-2 is low (e.g., at the lower voltageof the second voltage domain). The voltages VOUT-1 and VOUT-2 are onopposite sides of the second voltage domain circuit 150. The voltagesVOUT-1 and VOUT-2 are within a voltage range defined by the secondvoltage domain of the second voltage domain circuit 150.

In this implementation, the second voltage domain circuit 150 includes alatch circuit including inverters 15 and 16. The latch circuit of thesecond voltage domain circuit 150 can be configured to be set and resetin response to the NMOS devices N1, N2 included in the driver circuit140 (even with relatively low power supply voltages).

An example of operation of the voltage translator circuit 100 shown inFIG. 2 is as follows. When the voltage VIN is high, the voltage VIN-1 islow (in the first voltage domain as voltage VSS1) and the voltage VIN-2is high (in the first voltage domain as voltage VDD1). The voltagesVIN-1 and VIN-2 are capacitively coupled via the capacitive couplingcircuit to voltages VINT-1 and VINT-2, which are low (i.e., voltageVSS2) and high (i.e., voltage VREG), respectively, in the intermediatevoltage domain. Voltage VINT-1, which is equal to voltage VSS2, turnsoff (to an OFF state) NMOS device N1 so that VOUT-1 is high (in thesecond voltage domain as voltage VDD2) and VINT-2, which is equal tovoltage VREG, turns on (to an ON state) NMOS device N2 so that VOUT-2 islow (in the second voltage domain as voltage VSS2).

FIG. 3 is a diagram that illustrates example voltage domains associatedwith the voltage translator devices 100 shown in FIGS. 1 and 2. As shownin FIG. 3, the first voltage domain VD1 has a voltage range includingupper voltage VDD1 and lower voltage VSS1, the intermediate voltagedomain IVD has a voltage range including upper voltage VREG and lowervoltage VSS2, and the second voltage domain VD2 has a voltage rangeincluding upper voltage VDD2 and lower voltage VSS2. Because the circuitshown in FIG. 2 includes NMOS devices N1, N2, the intermediate voltagedomain IVD is based on the upper voltage VREG and lower voltage VSS2(from the second voltage domain VD2).

As shown in FIG. 3, the first voltage domain VD1 has a voltage rangedifferent from a voltage range of the second voltage domain VD2. Theintermediate voltage domain IVD has a voltage range that overlaps withat least the voltage range of the second voltage domain VD2. In someimplementations, the intermediate voltage domain IVD can have a voltagerange that overlaps with the voltage range of the first voltage domainVD1 (and/or the voltage range of the second voltage domain VD2).

As shown in FIG. 3, the intermediate voltage VREG is less than the uppervoltage VDD2 of the second voltage domain VD2. The intermediate voltageVREG is between the upper voltage VDD2 and lower voltage VSS2 of thesecond voltage domain VD2. The intermediate voltage VREG is between theupper voltage VDD1 and lower voltage VSS1 of the first voltage domainVD1. In some implementations, a difference (e.g., an absolutedifference) between the intermediate voltage VREG and the upper voltageVDD2 is at least two times greater (e.g., 1.6 V) than a thresholdvoltage (e.g., 0.8 V) of a switch device (e.g., NMOS device N1 and/orNMOS device N2) included in the driver circuit 140 shown in FIG. 2. Thevoltage VREG in the intermediate voltage domain circuit 130 is highenough so that the NMOS devices N1, N2 can set and reset the latchcircuit included in the second voltage domain circuit 150 (even withrelatively low power supply voltages).

FIG. 4 is a diagram that illustrates an example implementation of thevoltage translator device 100 shown in FIG. 1. FIG. 4 illustratesexamples of device elements that can be included in, or may function as,the first domain voltage circuit 110, the capacitive coupling circuit120, the intermediate voltage domain circuit 130, the driver circuit140, and/or the second voltage domain circuit 150. Many of the elementsshown in FIG. 4 that are similar or the same as those in FIG. 2 will notbe described again in connection with FIG. 4 to simplify thedescription.

As shown in FIG. 4, the intermediate voltage domain circuit 130 operatesbased on an intermediate voltage domain including upper domain voltageVDD2 and intermediate lower domain voltage VREG. Accordingly, theintermediate voltage domain circuit 130 and the second voltage domaincircuit 150 have the same upper domain voltage (second upper domainvoltage VDD2).

As shown in FIG. 4, the first voltage domain circuit 110 includesinverters J1 and J2. The voltage VIN-1 is capacitively coupled viacapacitor CA to the voltage VINT-1 and the voltage VIN-2 is capacitivelycoupled via capacitor CB to voltage VINT-2. In this implementation, theintermediate voltage domain circuit 130 includes a latch circuitincluding inverters J3 and H4. The voltages VINT-1 and VINT-2 are withina voltage range defined by the intermediate voltage domain of theintermediate voltage domain circuit 110.

The voltages VINT-1 and VINT-2 drive the elements of the driver circuit.Specifically, the voltage VINT-1 drives a gate of PMOS device P1 via aconnection between the intermediate voltage domain circuit 130 (e.g., aninput side of the intermediate voltage domain circuit 130) and the gateof PMOS device P1. The voltage VINT-2 drives a gate of PMOS device P2via a connection between the intermediate voltage domain circuit 130(e.g., an input side of the intermediate voltage domain circuit 130) andthe gate of PMOS device P2.

As shown in FIG. 4, a source of the PMOS device P1 of the driver circuit140 is coupled to a source of the PMOS device P2 of the driver circuit140. The drain of the PMOS device P1 is connected (e.g., via anelectrical connection) to an input side of the second voltage domaincircuit 150. The drain of the PMOS device P2 is connected (e.g., via anelectrical connection) to an output side of the second voltage domaincircuit 150. Accordingly, the driver circuit 140 is connected to theinput side and the output side of the second voltage domain circuit 150.

The voltage VOUT-1 can function as the output signal of the voltagetranslator device 100. The voltage VOUT-1 can be at the same state asthe input voltage VIN, but the two voltages can be in different voltagedomains. The voltage VOUT-2 can be opposite the voltage VOUT-1, and thevoltages VOUT-1 and VOUT-2 are within a voltage range defined by thesecond voltage domain of the second voltage domain circuit 150.

In this implementation, the second voltage domain circuit 150 includes alatch circuit including inverters J5 and J6. The latch circuit of thesecond voltage domain circuit 150 can be configured to be set and resetin response to the PMOS devices P1, P2 included in the driver circuit140 (even with relatively low power supply voltages).

An example of operation of the voltage translator circuit 100 shown inFIG. 4 is as follows. When the voltage VIN is high, the voltage VIN-1 islow (in the first voltage domain as voltage VSS1) and the voltage VIN-2is high (in the first voltage domain as voltage VSS1). The voltagesVIN-1 and VIN-2 are capacitively coupled via the capacitive couplingcircuit to voltages VINT-1 and VINT-2, which are low (i.e., voltage VREG(e.g., a ground voltage)) and high (i.e., voltage VDD2), respectively,in the intermediate voltage domain. Voltage VINT-1, which is equal tovoltage VREG, turns on PMOS device P1 so that VOUT-1 is high (in thesecond voltage domain as voltage VDD2) and VINT-2, which is voltageVDD2, turns off PMOS device P2 so that VOUT-2 is low (in the secondvoltage domain as voltage VSS2).

FIG. 5 is a diagram that illustrates example voltage domains associatedwith the voltage translator devices 100 shown in FIGS. 1 and 4. As shownin FIG. 5, the first voltage domain VD1 has a voltage range includingupper voltage VDD1 and lower voltage VSS1, the intermediate voltagedomain IVD has a voltage range including upper voltage VDD2 and lowervoltage VREG, and the second voltage domain VD2 has a voltage rangeincluding upper voltage VDD2 and lower voltage VSS2. Because the circuitshown in FIG. 4 includes PMOS devices P1, P2, the intermediate voltagedomain IVD is based on the upper voltage VDD2 (from the second voltagedomain VD2) and lower voltage VREG.

As shown in FIG. 5, the first voltage domain VD1 has a voltage rangedifferent from a voltage range of the second voltage domain VD2. Theintermediate voltage domain IVD has a voltage range that overlaps withthe voltage range of the first voltage domain VD1 and the voltage rangeof the second voltage domain VD2. In some implementations, theintermediate voltage domain IVD can have a voltage range that does notoverlap with the voltage range of the first voltage domain VD1 (and/orthe voltage range of the second voltage domain VD2).

As shown in FIG. 5, the intermediate voltage VREG is less than the uppervoltage VDD2 of the second voltage domain VD2. The intermediate voltageVREG is between the upper voltage VDD2 and lower voltage VSS2 of thesecond voltage domain VD2. The intermediate voltage VREG is outside ofthe upper voltage VDD1 and lower voltage VSS1 of the first voltagedomain VD1. In some implementations, a difference (e.g., an absolutedifference) between the intermediate voltage VREG and the upper voltageVDD2 is at least two times greater (e.g., 1.6 V) than a thresholdvoltage (e.g., 0.8 V) of a switch device (e.g., PMOS device P1 and/orPMOS device P2) included in the driver circuit 140 shown in FIG. 4. Thevoltage VREG included in the intermediate voltage domain circuit 130 islow enough so that the PMOS devices P1, P2 can set and reset the latchcircuit included in the second voltage domain circuit 150 (even withrelatively low power supply voltages).

The intermediate voltage domain circuit 110 (shown in FIGS. 1-5) canenable proper operation of the second voltage domain circuit 150 (e.g.,the latch in the second voltage domain circuit 150). The intermediatevoltage domain circuit 110 can enable proper operation of the secondvoltage domain circuit 150 (e.g., the latch in the second voltage domaincircuit 150) even when the second voltage domain is relatively low.During voltage transitions of the voltage VIN, the voltage swing ofcapacitors C1, C2 can be different. Despite this difference in voltageswing, the voltage translator device 100 can function at relatively highfrequencies. The voltage translator device 100 (because of theintermediate voltage domain circuit 110) can operate even when thevoltage range of the second voltage domain is relatively small (whentranslating from a high voltage domain to a low voltage domain). Thevoltage translator device (because of the intermediate voltage domaincircuit 110) can operate even when the voltage range of the firstvoltage domain is relatively small (when translating from a low voltagedomain to a high voltage domain).

FIG. 6 is a flowchart that illustrates a method of operating the voltagetranslator devices (e.g., voltage translator device 100) describedherein. As shown in FIG. 6, the method includes receiving an inputvoltage at a first voltage domain circuit configured to operate based ona first upper voltage and a first lower voltage (block 610). The firstvoltage domain can be, for example, the first voltage domain circuit 110shown in FIG. 1. The second voltage domain circuit 150 can include alatch circuit.

The method includes providing an output voltage at a second voltagedomain circuit configured to operate based on a second upper voltage anda second lower voltage (block 620). The second voltage domain can be,for example, the second voltage domain circuit 150 shown in FIG. 1. Thesecond voltage domain circuit 150 can include a latch circuit.

The method includes capacitively coupling the input voltage to anintermediate voltage domain circuit configured to operate based on anintermediate voltage and the second upper voltage or the second lowervoltage (block 630). The capacitive coupling can be performed using thecapacitive coupling circuit 120 shown in FIG. 1. The voltage domains cancorrespond with those shown in, for example, FIGS. 3 and 5.

The method includes triggering of switching of a switch device drivingthe second voltage domain circuit based on the capacitively coupledinput voltage (block 640). The switch device can be included in, forexample, the driver circuit 140 shown in FIG. 1.

In the foregoing description, when an element, such as a layer, aregion, a substrate, or component is referred to as being on, connectedto (e.g., via a connection), electrically connected to (e.g., via aconnection), coupled to, or electrically coupled to another element, itmay be directly on, connected or coupled to the other element, or one ormore intervening elements may be present. In contrast, when an elementis referred to as being directly on, directly connected to or directlycoupled to another element or layer, there are no intervening elementsor layers present. Although the terms directly on, directly connectedto, or directly coupled to may not be used throughout the detaileddescription, elements that are shown as being directly on, directlyconnected or directly coupled can be referred to as such. The claims ofthe application, if any, may be amended to recite exemplaryrelationships described in the specification or shown in the figures.

As used in this specification, a singular form may, unless definitelyindicating a particular case in terms of the context, include a pluralform. Spatially relative terms (e.g., over, above, upper, under,beneath, below, lower, and so forth) are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. In some implementations, therelative terms above and below can, respectively, include verticallyabove and vertically below. In some implementations, the term adjacentcan include laterally adjacent to or horizontally adjacent to.

Some implementations may be implemented using various semiconductorprocessing and/or packaging techniques. Some implementations may beimplemented using various types of semiconductor processing techniquesassociated with semiconductor substrates including, but not limited to,for example, Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride(GaN), Silicon Carbide (SiC) and/or so forth.

While certain features of the described implementations have beenillustrated as described herein, many modifications, substitutions,changes and equivalents will now occur to those skilled in the art. Itis, therefore, to be understood that the appended claims are intended tocover all such modifications and changes as fall within the scope of theimplementations. It should be understood that they have been presentedby way of example only, not limitation, and various changes in form anddetails may be made. Any portion of the apparatus and/or methodsdescribed herein may be combined in any combination, except mutuallyexclusive combinations. The implementations described herein can includevarious combinations and/or sub-combinations of the functions,components and/or features of the different implementations described.

What is claimed is:
 1. An apparatus, comprising: a first voltage domaincircuit configured to operate based on a first upper voltage and a firstlower voltage; a second voltage domain circuit configured to operatebased on a second upper voltage and a second lower voltage; a capacitivecoupling circuit electrically connected between the first voltage domaincircuit and the second voltage domain circuit; a driver circuitincluding a switch device and electrically coupled to the second voltagedomain circuit; and an intermediate voltage domain circuit configured totrigger switching of the switch device included in the driver circuit,the intermediate voltage domain circuit configured to operate based onan intermediate voltage and the second upper voltage or the second lowervoltage.
 2. The apparatus of claim 1, wherein the intermediate voltageis less than the second upper voltage.
 3. The apparatus of claim 1,wherein the intermediate voltage is greater than the second lowervoltage.
 4. The apparatus of claim 1, wherein a difference between theintermediate voltage and the second upper voltage or the second lowervoltage is at least two times greater than a threshold voltage of theswitch device included in the driver circuit.
 5. The apparatus of claim1, wherein the switch device is an N-channel device when theintermediate voltage domain operates based on the intermediate voltageand the second lower voltage.
 6. The apparatus of claim 1, wherein theswitch device is a P-channel device when the intermediate voltage domainoperates based on the intermediate voltage and the second upper voltage.7. The apparatus of claim 1, wherein the first voltage domain circuitincludes a latch circuit.
 8. The apparatus of claim 1, wherein thesecond voltage domain circuit includes a latch circuit configured to beset and reset in response to the switch device.
 9. An apparatus,comprising: a capacitive coupling circuit an input circuit electricallycoupled on a first side of the capacitive coupling circuit andconfigured to operate based on a first voltage domain; and an outputcircuit on a second side of the capacitive coupling circuit, the outputcircuit including: a first latch circuit configured to operate based ona second voltage domain different from the first voltage domain, aswitch device, and a second latch circuit configured to triggerswitching of the switch device and configured to operate based on anintermediate voltage domain.
 10. The apparatus of claim 9, wherein theintermediate voltage domain has a voltage range that overlaps with avoltage range of the second voltage domain.
 11. The apparatus of claim9, wherein the intermediate voltage domain has an upper voltage that isequal to an upper voltage of the second voltage domain.
 12. Theapparatus of claim 9, wherein the intermediate voltage domain has alower voltage that is equal to a lower voltage of the second voltagedomain.
 13. The apparatus of claim 9, wherein the intermediate voltagedomain has a voltage range at least two times greater than a thresholdvoltage of the switch device.
 14. The apparatus of claim 9, wherein thefirst latch circuit is configured to be set and reset by the switchdevice.
 15. The apparatus of claim 9, wherein the first voltage domainhas a voltage range different from a voltage range of the second voltagedomain.
 16. A method, comprising: receiving an input voltage at a firstvoltage domain circuit configured to operate based on a first uppervoltage and a first lower voltage; providing an output voltage at asecond voltage domain circuit configured to operate based on a secondupper voltage and a second lower voltage; capacitively coupling theinput voltage to an intermediate voltage domain circuit configured tooperate based on an intermediate voltage and the second upper voltage orthe second lower voltage; and trigger switching of a switch devicedriving the second voltage domain circuit based on the capacitivelycoupled input voltage.
 17. The method of claim 16, wherein the firstvoltage domain has a voltage range different from a voltage range of thesecond voltage domain.
 18. The method of claim 16, wherein the secondvoltage domain circuit includes a latch circuit configured to be set andreset in response to the switch device.
 19. The method of claim 16,wherein a difference between the intermediate voltage and the secondupper voltage or the second lower voltage is at least two times greaterthan a threshold voltage of the switch device.
 20. The method of claim16, wherein the intermediate voltage is between the second upper voltageand the second lower voltage.